Levin Roman Viktorovich

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Self-catalytic growth of GaInP nanostructures on silicon substrates from vapor phase: choice of source composition and catalytic droplets
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  265–269
3. GaInP on silicon nanostructures self-catalyst growth from vapor phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  45–49
4. Phase separation effects in AlGaAsSb/GaSb alloys
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  10–12
5. Analysis of Zn diffusion process from the vapor phase in InGaAs/InP materials
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  48–52
6. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
7. Forming regimes of Pd/Ge/Au contact system to $n$-GaAs influence on its electric parameters
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  15–18
8. The features of the layers growth in stressed InAs/GaSb superlattices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:3 (2022),  10–13
9. Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  932–936
10. Smoothing the surface of gallium antimonide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
11. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
12. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
13. High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1599–1603
14. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
15. On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276
16. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
17. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
18. GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1641–1646
19. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
20. Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  25–31
21. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
22. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
23. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
24. GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1358–1362
25. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  79–84
26. Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  715–718
27. Study of postgrowth processing in the fabrication of quantum-cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1132–1137
28. Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1677–1680
29. AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  66–74
30. Properties of narrow-bandgap (0.3–0.48 eV) A$^3$B$^5$ solid solution epilayers grown by metal-organic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  23–30


31. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476