Shobolov Evgenii L'vovich

Publications in Math-Net.Ru

1. Leakage current through dielectric in transistors having the channel length up to 100 nm
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  693–699
2. Silicon metal–oxide–semiconductor transistor with a dependent pocket contact and two-layer polysilicon gate
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  916–921
3. Prediction of the magnitude of the trapped charge in the buried oxide of silicon-on-insulator structures using the Poole–Frenkel effect
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  441–445
4. Poole–Frenkel effect and the opportunity of its application for the prediction of radiation charge accumulation in thermal silicon dioxide
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  990–994
5. Formation of fluorine-containing defects and nanocrystals in SiO$_2$ upon implantation with fluorine, silicon, and germanium ions: Numerical simulation and photoluminescence spectroscopy
   
   Fizika Tverdogo Tela, 57:11 (2015),  2106–2111
6. Silicon ion implantation for growing structurally perfect silicon layers on sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1662–1666