Makartsev Il'ya Vladimirovich

Publications in Math-Net.Ru

1. Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1582–1587
2. Model for multiparametric analysis of parameters short-channel transistors of HEMT type
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  618–623
3. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
4. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33