Zemlyakov Valerii Evgen'evich

Publications in Math-Net.Ru

1. Модификация параметров AlGaN/GaN-транзисторных структур пассивацией и обработкой в водородной плазме
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  336–344
2. Characterization of AlGaN/GaN high frequency transistors with field-plate electrode on a silicon substrate
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  370–375
3. Effect of temperature on the switching voltage of avalanche $S$-diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  23–26
4. Mechanism of sequential switching of current filaments in an avalanche $S$-diode
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  393–399
5. Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  844–847
6. Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1260–1263
7. Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  872–876
8. Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  15–17
9. Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  748–752
10. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
11. AlN/GaN heterostructures for normally-off transistors
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
12. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
13. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
14. Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  331–338
15. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
16. Normally off transistors based on in situ passivated AlN/GaN heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  72–79
17. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
18. Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1405–1409
19. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  829–835
20. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  403–407
21. Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:8 (2010),  39–47