Khazanova Sof'ya Vladislavovna

Publications in Math-Net.Ru

1. Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  668–675
2. Transport characteristics calculation of bilayer graphene with different misorientation angle
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  357–361
3. Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  844–847
4. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  833–838
5. Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  872–876
6. Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  846–849
7. Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  968–973
8. Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1462–1467
9. Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  145–148
10. Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  58–62
11. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  53–57
12. Determination of the electron concentration and mobility in the vicinity of a quantum well and $\delta$-doped layer in InGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1532–1536
13. Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1510–1514