Khrykin Oleg Igorevich

Publications in Math-Net.Ru

1. Structural and superconducting properties of tungsten and iridium films for low-temperature microcalorimeters
   
   Fizika Tverdogo Tela, 66:7 (2024),  1075–1080
2. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
3. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
4. Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  627–629
5. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
6. Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1380–1383
7. Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1300–1303
8. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
9. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
10. Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  50–59
11. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598
12. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
13. Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1469–1472
14. Single-crystal GaN/AlN layers on CVD diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80
15. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  17–25
16. Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1419–1423
17. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  86–94
18. Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1511–1513