Daniltsev Vyacheslav Mikailovich

Publications in Math-Net.Ru

1. Structural and superconducting properties of tungsten and iridium films for low-temperature microcalorimeters
   
   Fizika Tverdogo Tela, 66:7 (2024),  1075–1080
2. Surface treatment of gallium arsenide after etching in C$_2$F$_5$Cl-plasma
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:19 (2023),  39–42
3. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
4. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
5. Features of the vapor-phase epitaxy of GaAs on nonplanar substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  958–961
6. Vertical field-effect transistor with control $p$–$n$-junction based on GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1311–1314
7. Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  50–59
8. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
   
   Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462
9. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
10. Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface $\delta$-doping
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1481–1485
11. Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1444–1447
12. Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1419–1423