Arkhipova Ekaterina Alexandrovna

Publications in Math-Net.Ru

1. Ультратонкие слои оксида церия для формирования субмикронных YBCO-структур
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  53–56
2. Исследование спектров электролюминесценции в гетероструктурах с квантовыми ямами на основе твердых растворов HgCdTe при латеральной токовой накачке
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:5 (2026),  9–13
3. Effect of the microstructure of ultrathin YBaCuO films on the nonlinear microwave response
   
   Fizika Tverdogo Tela, 67:7 (2025),  1236–1240
4. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
5. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
6. Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
7. Andreev bound states and paramagnetic effect at low temperatures in YBCO thin films
   
   Fizika Tverdogo Tela, 66:8 (2024),  1264–1271
8. Structural and superconducting properties of tungsten and iridium films for low-temperature microcalorimeters
   
   Fizika Tverdogo Tela, 66:7 (2024),  1075–1080
9. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
10. Electrophysical properties of multilayer DLC films with different $sp^3$-phase contents
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  30–33
11. Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  259–264
12. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
    
    Nanosystems: Physics, Chemistry, Mathematics, 13:5 (2022),  578–584
13. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
14. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
15. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
16. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
17. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
18. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
19. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
20. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232