Okhapkin Andrei Igorevich

Publications in Math-Net.Ru

1. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
2. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
3. Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
4. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
5. Electrophysical properties of multilayer DLC films with different $sp^3$-phase contents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  30–33
6. Thermal annealing of multilayer films of diamond-like carbon with a variable content of $sp^3$-phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:13 (2024),  12–15
7. Plasma chemical deposition of hydrogenated DLC films with different hydrogen and $sp^3$-hybrid carbon content
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  309–312
8. Surface treatment of gallium arsenide after etching in C$_2$F$_5$Cl-plasma
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:19 (2023),  39–42
9. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  833–838
10. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
11. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
12. Features of the vapor-phase epitaxy of GaAs on nonplanar substrates
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  958–961
13. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
14. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
15. SIMS analysis of carbon-containing materials: content of carbon atoms in $sp^{2}$ and $sp^{3}$ hybridization states
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  38–42
16. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
17. A new approach to tof-sims analysis of the phase composition of carbon-containing materials
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  50–54
18. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
19. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
20. Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1469–1472