Zubov Fedor Ivanovich

Publications in Math-Net.Ru

1. Направленность вывода излучения из кольцевых микролазеров с нарушенной вращательной симметрией
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  27–30
2. Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  45–49
3. High-frequency modulation of a quantum dot microring laser at elevated temperature
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025),  32–35
4. Spectral characteristics of an optically coupled pair of stripe lasers based on InAs/InGaAs/GaAs quantum dots
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  57–60
5. Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  23–27
6. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
7. Model for speed performance of quantum-dot waveguide photodiode
   
   Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
8. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
   
   Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
9. Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369
10. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
11. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
12. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
13. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
14. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
15. Parasitic recombination in a laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
16. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
17. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
18. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
19. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
20. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
21. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
22. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
23. Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  260–265
24. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
25. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
26. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
27. Terahertz radiation generation in multilayer quantum-cascade heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
28. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
29. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
30. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
31. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  956–960
32. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
33. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
34. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
35. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
36. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1353–1356
37. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053
38. Features of simultaneous ground- and excited-state lasing in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  241–246
39. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  235–240
40. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  996–1000
41. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  540–546