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Publications in Math-Net.Ru
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Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025), 39–43
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Effect of nitrogen plasma treatment on the structural and optical properties of InGaN
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023), 32–35
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Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 689–692
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Specific features of structural stresses in InGaN/GaN nanowires
Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788
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MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35
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Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887
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Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35
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