Kalinnikov Mikhail Anatol'evich

Publications in Math-Net.Ru

1. Ultrafast luminescence kinetics and localization effects of nonequilibrium carriers in degenerate $n$-InGaN layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:8 (2025),  688–695
2. Schottky diodes based on monocrystalline Al/AlGaN/GaN heterostructures for zero-bias microwave detection
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1148–1156
3. Photoinduced band-gap renormalization in degenerate narrow-gap $n$-InGaN epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  563–570
4. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
5. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
6. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
7. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
8. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
9. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
10. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
11. Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  897–902