Obolensky Sergei Vladimirovich

Publications in Math-Net.Ru

1. Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  668–675
2. Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  1025–1031
3. Influence of single radiation defect cluster formation on transistor memory cell switching
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  270–275
4. The influence of a single radiation defect cluster forming on the transistor structure channel conductivity
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  637–641
5. Model for multiparametric analysis of parameters short-channel transistors of HEMT type
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  618–623
6. Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier
   
   Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1501–1503
7. Silicon metal–oxide–semiconductor transistor with a dependent pocket contact and two-layer polysilicon gate
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  916–921
8. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
9. Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  872–876
10. Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  846–849
11. Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  743–747
12. Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  15–17
13. Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  51–54
14. A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  38–41
15. Secondary-ion mass spectroscopy for analysis of the implanted hydrogen profile in silicon and impurity composition of silicon-on-insulator structures
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1850–1853
16. Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1158–1162
17. Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  968–973
18. Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  945–951
19. On heating and relaxation of the electron–hole-gas energy in the track of a primary recoil atom
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  791–795
20. Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1391–1394
21. Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1279–1284
22. Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1275–1278
23. Computational and experimental simulation of static memory cells of submicron microcircuits under the effect of neutron fluxes
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1250–1256
24. Investigation into the radiation hardness of photodiodes based on silicon-on-sapphire structures
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  388–395
25. Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1414–1420
26. Development of a physical-topological model for the response of a high-power vertical DMOS transistor to the effect of pulsed gamma-radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1366–1372
27. Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1295–1299
28. Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1543–1546
29. Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1520–1524
30. Optimization of the superlattice parameters for THz diodes
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1493–1497
31. Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1489–1492
32. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1706–1712
33. Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1605–1609
34. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
35. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1548–1553
36. Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  331–338
37. High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1585–1592
38. On the radiation resistance of planar Gunn diodes with $\delta$-doped layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1507–1515
39. Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  71–75
40. Modeling of powerful HEMT under high energy radiation
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1587–1592
41. Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon $p$–$n$ junction
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  134–139
42. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  230–234
43. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1533–1538
44. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  346–351