Kozlov Vladimir Anatol'evich

Publications in Math-Net.Ru

1. Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  743–747
2. Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1158–1162
3. Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  945–951
4. On heating and relaxation of the electron–hole-gas energy in the track of a primary recoil atom
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  791–795
5. Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1391–1394
6. Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1279–1284
7. Computational and experimental simulation of static memory cells of submicron microcircuits under the effect of neutron fluxes
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1250–1256
8. Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1218–1223
9. Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1337–1345
10. Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1295–1299
11. Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1520–1524
12. Optimization of the superlattice parameters for THz diodes
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1493–1497
13. Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1489–1492
14. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1706–1712
15. Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1605–1609
16. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1548–1553
17. High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1585–1592
18. Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  71–75
19. Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon $p$–$n$ junction
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  134–139
20. Tunneling electron transport through heterobarriers with nanometer heterogeneities
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1547–1551
21. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1533–1538