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Publications in Math-Net.Ru
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Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure
Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 668–675
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Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 1025–1031
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Influence of single radiation defect cluster formation on transistor memory cell switching
Fizika i Tekhnika Poluprovodnikov, 57:4 (2023), 270–275
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The influence of a single radiation defect cluster forming on the transistor structure channel conductivity
Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 637–641
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Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses
Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747
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Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54
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Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 945–951
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Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1279–1284
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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524
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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1489–1492
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