Puzanov Aleksandr Sergeevich

Publications in Math-Net.Ru

1. Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  668–675
2. Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  1025–1031
3. Influence of single radiation defect cluster formation on transistor memory cell switching
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  270–275
4. Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  844–847
5. The influence of a single radiation defect cluster forming on the transistor structure channel conductivity
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  637–641
6. Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  872–876
7. Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  846–849
8. Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  743–747
9. Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  51–54
10. A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  38–41
11. Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  968–973
12. Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  945–951
13. On heating and relaxation of the electron–hole-gas energy in the track of a primary recoil atom
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  791–795
14. Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1391–1394
15. Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1279–1284
16. Computational and experimental simulation of static memory cells of submicron microcircuits under the effect of neutron fluxes
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1250–1256
17. Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1295–1299
18. Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1520–1524
19. Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1489–1492
20. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1706–1712
21. High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1585–1592
22. Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  71–75