Prudaev Il'ya Anatol'evich

Publications in Math-Net.Ru

1. Effect of temperature on the switching voltage of avalanche $S$-diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  23–26
2. Mechanism of sequential switching of current filaments in an avalanche $S$-diode
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  393–399
3. Effect of barrier contacts on carrier transport in homogeneous GaAs structures doped with deep Cr and EL$_2$ centers
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  693–698
4. Nonlinearity of current-voltage characteristics of homogeneous compensated GaAs detector structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  37–40
5. Charge carrier transport and deep levels recharge in avalanche $S$-diodes based on GaAs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  21–29
6. On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  240–246
7. Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1178–1184
8. Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1036–1040
9. Deep centers in TiO$_2$-Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1036–1042
10. Photoelectric characteristics of metal – Ga$_2$O$_3$–GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  357–363
11. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1391–1395
12. A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1009–1011