Salii Roman Aleksandrovich

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Влияние типа подложки-носителя на резистивные и оптические свойства AlGaAs/GaInAs светоизлучающих инфракрасных диодов
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  330–335
3. AlGaAs subcells for hybrid А$^3$В$^5$//Si solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:3 (2026),  49–52
4. Photoelectric laser radiation converter $\lambda$ = 1064 nm based on GaInAsP/InP
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  447–451
5. Hybrid multijunction solar cells based on bonding of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ and silicon materials
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  328–331
6. Metamorphic InGaAs/GaAs heterostructures for radiation-resistant laser power converters
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  291–293
7. Photovoltaic converters resistive parameters effect on its IV-curves and electroluminescence maps
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  281–285
8. Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  190–194
9. Ferroelectric properties of (Al,Ga)InP$_2$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  130–135
10. Tandem GaInP/Ga(In)As structures for triple-junction hybrid GaInP/Ga(In)As//Si solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:13 (2025),  40–43
11. Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850–960 nm)
    
    Optics and Spectroscopy, 132:11 (2024),  1146–1149
12. Impact of the atomic ordering degree on the ferroelectric properties of GaInP$_2$ alloys
    
    Optics and Spectroscopy, 132:11 (2024),  1127–1130
13. Study of the incorporation of group V atoms into arsenide-phosphide solid solutions grown by vapor-phase epitaxy using (CH$_3$)$_3$As an arsenic source
    
    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  541–543
14. Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:18 (2024),  22–26
15. Photodetectors with the long-wavelength cutoff of 2.4 $\mu$m based on metamorphic InGaAs/InP heterostructures grown by metal-organic vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  15–18
16. Current invariant as a method of searching for the optimum band gap of subcells of multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  32–34
17. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
18. Effect of temperature on current through various recombination channels in GaAs solar cells with GaInAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  700–705
19. Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  620–623
20. Epitaxial heterostructures of the active region for near-infrared LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  538–541
21. High-efficiency GaInP/GaAs photoconverters of the 600 nm laser line
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  32–34
22. Study of InP/GaP quantum wells grown by vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
23. A GaInP-based photo-converter of laser radiation with an efficiency of 46.7% at a wavelength of 600 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  24–26
24. High-speed photodetectors based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
25. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
26. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  614–617
27. Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  28–31
28. Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  51–54
29. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
30. Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  29–31
31. Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1079–1087
32. Effects of doping of bragg reflector layers on the electrical characteristics of InGaAs/GaAs metamorphic photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  400–407
33. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
34. Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  13–14
35. The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  30–33
36. Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1126–1130
37. In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  729–735
38. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  94–100
39. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  525–530
40. Determination of the technological growth parameters in the InAs–GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1136–1143
41. Site-Controlled Growth of Single InP QDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1120–1123
42. Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  671–676