Malevskii Dmitrii Andreevich

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Влияние типа подложки-носителя на резистивные и оптические свойства AlGaAs/GaInAs светоизлучающих инфракрасных диодов
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  330–335
3. Исследование температурной зависимости световых вольт-амперных характеристик кремниевых гетероструктурных солнечных элементов
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  27–30
4. Photovoltaic converters resistive parameters effect on its IV-curves and electroluminescence maps
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  281–285
5. Effect of irradiation temperature on the carrier removal rate in GaN
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
6. Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  190–194
7. From sphere to hemisphere: secondary optics for micro-CPV modules
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  20–24
8. Formation of the light extracting surface of IR (850 nm) light-emitting diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  888–893
9. Design and efficiency correlation of IR light-emitting diodes based on quantum dimensional heterostructures AlGaAs
   
   Zhurnal Tekhnicheskoi Fiziki, 94:4 (2024),  632–637
10. Electroluminescence of leds with quantum wells at high and low-level injection
    
    Optics and Spectroscopy, 132:12 (2024),  1214–1218
11. Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850–960 nm)
    
    Optics and Spectroscopy, 132:11 (2024),  1146–1149
12. Three-parameter tube model of current spreading in solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  573–576
13. Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  49–52
14. Secondary optics for the “micro-CPV” system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:23 (2024),  82–84
15. Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:18 (2024),  22–26
16. Degradation study of subnanosecond photovoltaic module parameters during thermocycling
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  44–46
17. Investigation of concentrator photovoltaic modules with reflective secondary optical elements
    
    Zhurnal Tekhnicheskoi Fiziki, 93:6 (2023),  809–816
18. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
19. Persistent relaxation processes in proton-irradiated 4H-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  743–750
20. Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  53–57
21. Method for controlling the ratio of the direct and diffuse components of solar radiation when measuring photovoltaic characteristics of a hybrid module
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  69–72
22. Hybrid photovoltaic modules: comparison of lab and field research
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  56–58
23. Hybrid concentrator-planar photovoltaic module with heterostructure solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  15–19
24. Plasmachemical etching in postgrowth technology of photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022),  604–607
25. Post-growth technology of multi-junction photovoltaic converters based on A$^3$B$^5$ heterostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  108–112
26. Electron irradiation hardness of high-voltage 4H-SiC Schottky diodes in the operating temperature range
    
    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  809–813
27. Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  441–445
28. Electrochemical deposition of contact materials in postgrowth technology of photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  376–379
29. Photo-receiving device for conversion of energy and data transmitted via atmospheric laser channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  3–7
30. High-efficiency photovoltaic modules with solar concentrators
    
    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  915–921
31. Measurement of the thermal characteristics of concentrator photovoltaic modules
    
    Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021),  291–298
32. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
33. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
34. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
35. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  614–617
36. Dynamics of air humidity in a concentrator photovoltaic module with a drying device
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  52–54
37. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
38. Investigation of passivating and protecting methods for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  35–37
39. High-efficiency photoelectric units with sunlight concentrators
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  24–26
40. Control system of Sun-tracking accuracy for concentration photovoltaic installations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  11–13
41. Electroinsulated heat sinks for concentrated photovoltaic solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  29–31
42. Increasing the efficiency of concentrator photovoltaic units with focons as secondary optical concentrators
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  38–40
43. High-efficiency conversion of high-power-density laser radiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  26–28
44. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
45. Influence of heat dissipation conditions on the characteristics of concentrator photoelectric modules
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  390–394
46. Thermal characteristics of high-efficiency photovoltaic converters of high-power laser light
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  105–110
47. On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (-197 $\le T\le$ +85$^\circ$C)
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1374–1379
48. Measuring complex for studying cascade solar photovoltaic cells and concentrator modules on their basis
    
    Zhurnal Tekhnicheskoi Fiziki, 85:6 (2015),  104–110
49. New-generation concentrator modules based on cascade solar cells: Design and optical and thermal properties
    
    Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  72–79
50. Effect of secondary lens concentrators on the output parameters of solar modules with cascade photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 80:7 (2010),  90–95