Malevskaya Alexandra Vyacheslavovna

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Влияние типа подложки-носителя на резистивные и оптические свойства AlGaAs/GaInAs светоизлучающих инфракрасных диодов
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  330–335
3. Variations in the electric potential of a metal nanoparticle on a dielectric
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  620–628
4. Increasing the efficiency of optical power input in AlGaAs/GaAs photovoltaic laser converters
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  209–213
5. Features of testing the characteristics of micro-sized photovoltaic converters of laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  205–208
6. Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  190–194
7. GaInP on silicon nanostructures self-catalyst growth from vapor phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  45–49
8. Micro-dimensional GaSb photovoltaic converters of high-power density laser radiation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  50–53
9. Formation of the light extracting surface of IR (850 nm) light-emitting diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  888–893
10. Design and efficiency correlation of IR light-emitting diodes based on quantum dimensional heterostructures AlGaAs
    
    Zhurnal Tekhnicheskoi Fiziki, 94:4 (2024),  632–637
11. Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850–960 nm)
    
    Optics and Spectroscopy, 132:11 (2024),  1146–1149
12. Electrochemical deposition of contact materials for GaSb-based high-power photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  7–10
13. High-power subnanosecond module based on $p$–$i$–$n$ AlGaAs/GaAs photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  5–8
14. Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:18 (2024),  22–26
15. Subnanosecond AlGaAs/GaAs photodetectors with Bragg reflectors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  38–41
16. Tunnel diodes $n^{++}$-GaAs:($\delta$-Si)/$p^{++}$-Al$_{0.4}$Ga$_{0.6}$As:(C) for connecting elements of multijunction laser photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  39–42
17. Contact systems for photovoltaic converters based on InGaAsP/InP
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  28–31
18. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
19. Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  620–623
20. High-efficiency GaInP/GaAs photoconverters of the 600 nm laser line
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  32–34
21. Forming regimes of Pd/Ge/Au contact system to $n$-GaAs influence on its electric parameters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  15–18
22. Plasmachemical etching in postgrowth technology of photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022),  604–607
23. Post-growth technology of multi-junction photovoltaic converters based on A$^3$B$^5$ heterostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  108–112
24. Electrochemical deposition of contact materials in postgrowth technology of photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  376–379
25. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
26. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
27. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
28. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  614–617
29. Dynamics of air humidity in a concentrator photovoltaic module with a drying device
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  52–54
30. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
31. Investigation of passivating and protecting methods for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  35–37
32. Control system of Sun-tracking accuracy for concentration photovoltaic installations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  11–13
33. Development of methods for liquid etching of a separation mesa-structure in creating multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  14–16
34. Studying the formation of antireflection coatings on multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  15–17
35. A study of ohmic contacts of power photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  12–15
36. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
37. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1249–1253
38. Thermophotovoltaic generators based on gallium antimonide
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  270–277