Ivanov Èduard Vladimirovich

Publications in Math-Net.Ru

1. Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  34–37
2. Absorption of microwave radiation and magnetoresistance oscillations in InAs/GaSb composite quantum wells with inverted band spectrum in a quantizing magnetic field (Review)
   
   Fizika Tverdogo Tela, 66:3 (2024),  323–333
3. Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface
   
   Fizika Tverdogo Tela, 65:4 (2023),  645–651
4. Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  995–1010
5. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
6. Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure
   
   Fizika Tverdogo Tela, 62:11 (2020),  1822–1827
7. Radiative recombination and impact ionization in semiconductor nanostructures (review)
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1267–1288
8. Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  202–206
9. InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m
   
   Fizika Tverdogo Tela, 61:10 (2019),  1746–1753
10. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
11. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
12. Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures
    
    Fizika Tverdogo Tela, 60:3 (2018),  585–590
13. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
14. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
15. Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons
    
    Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017),  315–318
16. Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800
17. High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in $n$-InAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  938–943
18. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1536–1541
19. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1037–1042
20. Two-color luminescence from a single type-II InAsSbP/InAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  30–35
21. Increasing output power of LEDs ($\lambda$ = 1.7–2.4 $\mu$m) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013),  39–45
22. Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1386–1391
23. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  251–255
24. Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  69–74


25. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476