Konovalov G G

Publications in Math-Net.Ru

1. Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  508–515
2. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
3. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
4. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
5. Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1420–1424
6. Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
   
   Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1720–1726
7. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 $\mu$m based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1109–1115
8. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1037–1042
9. Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes
   
   Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  690–695
10. Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  43–49
11. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  251–255
12. Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  95–103
13. Photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for 2.5–4.9 $\mu$m spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:1 (2011),  11–17
14. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49


15. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476