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Publications in Math-Net.Ru
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Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026), 345–350
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InAs/InAsSbP bridge photodiodes: features of the fabrication technology
Fizika i Tekhnika Poluprovodnikov, 59:8 (2025), 505–509
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Bridge-contact microdisk lasers formed by wet chemical etching
Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 37–42
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Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025), 34–37
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Lasing in InGaN/GaN/AlGaN disk microstructures on silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025), 41–45
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Photodetectors with the long-wavelength cutoff of 2.4 $\mu$m based on metamorphic InGaAs/InP heterostructures grown by metal-organic vapor-phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024), 15–18
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Development of a method for etching the InAs/InAsSbP photodiode heterostructures
Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 710–715
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Gettering of epitaxial indium arsenide by the rare Earth element holmium
Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 89–94
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Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy
Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 508–515
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Spectral and electrical properties of led heterostructures with InAs-based active layer
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 682–687
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Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 607–613
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Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)
Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 677–683
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Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m
Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 202–206
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Influence of hydrogen on the electrical properties of Pd/InP structures
Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1427–1430
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GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1094–1099
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Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1273–1277
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Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1720–1726
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