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Publications in Math-Net.Ru
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InAs/InAsSbP bridge photodiodes: features of the fabrication technology
Fizika i Tekhnika Poluprovodnikov, 59:8 (2025), 505–509
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Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025), 34–37
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Conductivity of nanocontact to A$^{\mathrm{III}}$As- and A$^{\mathrm{III}}$Sb semiconductors with a native oxide layer
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:11 (2024), 42–46
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Development of a method for etching the InAs/InAsSbP photodiode heterostructures
Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 710–715
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Gettering of epitaxial indium arsenide by the rare Earth element holmium
Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 89–94
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Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy
Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 508–515
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Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010
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Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 607–613
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Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)
Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 677–683
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Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 50–54
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GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1094–1099
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Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911
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Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons
Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017), 315–318
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Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1420–1424
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Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1720–1726
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Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 1003–1006
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High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 $\mu$m based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1109–1115
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Passivation of infrared photodiodes with alcoholic sulfide solution
Fizika i Tekhnika Poluprovodnikov, 45:4 (2011), 535–539
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Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors
Fizika i Tekhnika Poluprovodnikov, 44:5 (2010), 699–705
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Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010), 43–49
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