Voznyuk Gleb Valer'evich

Publications in Math-Net.Ru

1. Single-mode quantum-cascade lasers with variable etching depth of grating slits
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  23–28
2. Single-mode lasing on radial modes in ring cavity quantum-cascade lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  52–56
3. Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  552–555
4. Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022),  611–612
5. On the effect of etching with a focused Ga$^+$ ion beam in the energy range 12–30 keV on the luminescent properties Al$_{0.18}$Ga$_{0.82}$As/GaAs/Al$_{0.18}$Ga$_{0.82}$As heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1120–1124
6. Surface-emitting quantum-cascade lasers with a grating formed by focused ion beam milling
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  908–914
7. Study of the spatial characteristics of emission of surface-emitting ring quantum-cascade lasers
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  601–606
8. Subwave textured surfaces for the radiation coupling from the waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:6 (2022),  51–54
9. Quantum-cascade laser with radiation output through a textured layer
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
10. Surface emitting quantum-cascade ring laser
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
11. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
12. Calculation of the Ga+ FIB ion dose distribution by SEM image
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
13. Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  8–11
14. Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1579–1583
15. Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  816–818