Mynbaeva Marina Gelievna

Publications in Math-Net.Ru

1. Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  294–297
2. the features of the crystallization of an intermediate silicon layer during the transfer of a thin 3C-SiC(001) layer onto a 6H-SiC(0001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  11–14
3. Interaction of silicon carbide with silicon melt formed under conditions of direct bonding of epitaxial structures of 3C-SiC/Si and 6H-SiC wafers
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  501–504
4. Comparative studies of the properties of thick GaN layers with different types of crystal structure grown on a ceramic substrate
   
   Fizika Tverdogo Tela, 65:12 (2023),  2125–2127
5. The temperature distribution simulation in the graphene sublimation growth zone on SiC substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1776–1780
6. Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1094–1098
7. Optical properties of quasi-bulk gallium-nitride crystals with highly oriented texture structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  554–558
8. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72
9. Formation of graphite/SiC structures by the thermal decomposition of silicon carbide
   
   Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  138–142
10. Radiation hardness of $n$-GaN Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
11. Large-area crystalline GaN slabs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  84–90
12. Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1573–1577
13. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  364–368
14. Analysis of stacking faults in gallium nitride by Fourier transform of high-resolution images
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  60–68
15. Analysis of photoconductivity spectra with a strongly delayed photoresponse
    
    Zhurnal Tekhnicheskoi Fiziki, 82:9 (2012),  119–122
16. Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  31–36
17. Diffusion in porous silicon carbide
    
    Fizika Tverdogo Tela, 53:5 (2011),  885–891
18. Photoelectric properties of porous GaN/SiC heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1369–1372
19. Fabrication of improved-quality seed crystals for growth of bulk silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  847–851
20. Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  634–638
21. Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1436–1438
22. New approach to rapid characterization of single-crystalline silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:2 (2010),  70–76