Feklisova Olga Vladimirovna

Publications in Math-Net.Ru

1. Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  550–553
2. Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  59–64
3. Electrical activity of extended defects in multicrystalline silicon
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  266–271
4. Recombination activity of interfaces in multicrystalline silicon
   
   Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  741–745
5. EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon
   
   Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  737–740
6. Effect of copper on the recombination activity of extended defects in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  732–736
7. Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon
   
   Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  195–198
8. Annealing kinetics of boron-containing centers in electron-irradiated silicon
   
   Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  192–194
9. Electrical properties of plastically deformed silicon due to its interaction with an iron impurity
   
   Fizika Tverdogo Tela, 53:6 (2011),  1175–1178