Kalyadin Anton Evgenievich

Publications in Math-Net.Ru

1. Photoluminescence related to dislocations in silicon plastically deformed under bending mode of central symmetry
   
   Fizika Tverdogo Tela, 67:5 (2025),  810–816
2. Luminescence centers in silicon irradiated by femtosecond laser
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1164–1169
3. Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  298–301
4. Temperature dependence of dislocation-related electroluminescence in silicon light-emitting diodes containing oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  289–294
5. Silicon light-emitting diodes with dislocation-related luminescence fabricated with participation of oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  904–907
6. The excitation efficiency for dislocation-related luminescence centers in silicon with oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  542–545
7. Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  928–931
8. Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  550–553
9. Silicon light-emitting diodes with luminescence from (113) defects
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  580–584
10. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
11. Dislocation-related photoluminescence in silicon implanted with germanium ions
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  165–168
12. Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  161–164
13. Defect structure of GaAs layers implanted with nitrogen ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  24–30
14. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
15. Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1182–1184
16. Dislocation-related photoluminescence in silicon implanted with fluorine ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  14–20
17. Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
    
    Fizika Tverdogo Tela, 58:12 (2016),  2411–2414
18. Electroluminescence properties of LEDs based on electron-irradiated $p$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  254–258
19. Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  250–253
20. Si:Si LEDs with room-temperature dislocation-related luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244
21. Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1700–1703
22. Photoluminescence in silicon implanted with silicon ions at amorphizing doses
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1182–1187
23. Photoluminescence in silicon implanted with erbium ions at an elevated temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1038–1040