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Publications in Math-Net.Ru
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High-temperature diffusion of beryllium in AlN as an area to solve problem of $p$-type doping and reduce intensity of optical absorption
Fizika Tverdogo Tela, 67:6 (2025), 940–945
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Isotopically modified silicon carbide: a semiconductor platform for quantum technologies
Fizika Tverdogo Tela, 67:1 (2025), 114–120
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Температурная стабильность спиновых дефектов в $6H$-SiC на основе данных фотолюминесценции и электронного парамагнитного резонанса
Pis'ma v Zh. Èksper. Teoret. Fiz., 122:2 (2025), 116–122
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Creating NV$^-$-defects in silicon carbide 6$H$–SiC by irradiation with high-energy electrons
Fizika Tverdogo Tela, 66:4 (2024), 537–541
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Optical spin initialization of nitrogen vacancy centers in a $^{28}$Si-enriched 6H-SiC crystal for quantum technologies
Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024), 587–592
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Negatively charged nitrogen-vacancy centers in a silicon carbide crystal of $6H$-$^{28}\mathrm{SiC}$
Fizika i Tekhnika Poluprovodnikov, 58:9 (2024), 485–488
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Influence of photoexcitation conditions on the spin polarization of nitrogen-vacancy centers in isotopically enriched silicon carbide $6$H-$^{28}$SiC
Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, 166:2 (2024), 187–199
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Optical and spin properties of silicon vacancy centers created by proton irradiation in a $6H/15R$ silicon carbide heterostructure
Fizika Tverdogo Tela, 65:6 (2023), 1031–1036
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The effect of liquid Silicon on the AlN crystal growth
Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 527
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High-temperature diffusion of the acceptor impurity Be in AlN
Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 275–278
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Origin of green coloration in AlN crystals grown on SiC seeds
Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 513–517
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Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN
Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 224–227
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Growing bulk aluminum nitride and gallium nitride crystals by the sublimation sandwich method
Fizika Tverdogo Tela, 61:12 (2019), 2298–2302
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Raman scattering in AlN crystals grown by sublimation on SiC и AlN seeds
Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1593–1596
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Influence of neutron irradiation on etching of SiC in KOH
Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1104–1106
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Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates
Fizika Tverdogo Tela, 57:12 (2015), 2400–2404
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