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Publications in Math-Net.Ru
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Spectral and electrical properties of led heterostructures with InAs-based active layer
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 682–687
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Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range
Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 502–506
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Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 51–54
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Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252
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High-temperature luminescence in an $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb light-emitting heterostructure with a high potential barrier
Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1270–1275
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Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers
Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 75–82
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Electrical and electroluminescent properties of InAsSb-Based LEDs ($\lambda$ = 3.85–3.95 $\mu$m) in the temperature interval 20–200$^\circ$C
Zhurnal Tekhnicheskoi Fiziki, 82:1 (2012), 73–76
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Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures
Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011), 91–96
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Effect of temperature on the electroluminescent properties of mid-IR ($\lambda_{\mathrm{max}}\approx$ 4.4 $\mu$m) flip-chip LEDs based on an InAs/InAsSbP heterostructure
Fizika i Tekhnika Poluprovodnikov, 45:11 (2011), 1560–1563
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Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 $\mu$m) optron consisting of an LED array and a wideband photodiode
Zhurnal Tekhnicheskoi Fiziki, 80:2 (2010), 99–104
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High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ($\lambda\approx$ 3.3 $\mu$m)
Fizika i Tekhnika Poluprovodnikov, 44:2 (2010), 278–284
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