Grabko Gennady Ivanovich

Publications in Math-Net.Ru

1. Specific aspects of the response to electric field of the natural pyrite electronic system
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  26–28
2. The temperature dependences of the electrical characteristics of nature pyrite $n$ in the range 295–635 K
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:12 (2023),  10–12
3. Polarization processes in thin layers of glassy hybrid system Ge$_{28.5}$Pb$_{14.0}$Fe$_{1.0}$S$_{56.5}$
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  559–565
4. The temperature dependence of the electrical characteristics of natural pyrite FeS$_2$ with the $p$-type conductivity in the temperature range of 295–635 K
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:23 (2022),  26–29
5. Temperature dependences of the thermal emf coefficient, resistivity and thermal conductivity of the electron and hole pyrite FeS$_2$ in the range of 293–400 K
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  826–831
6. Charge transfer in thin layers of glassy Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  450–454
7. Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1038–1040
8. Ultralow-frequency photoelectric response of amorphous As$_2$Se$_3$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  944–947
9. Study of the structure of $a$-As$_2$Se$_3\langle$Bi$\rangle_x$ amorphous layers by dielectric spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  92–96
10. Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:2 (2013),  1–6
11. Effect of bismuth dopant on the dielectric properties of modified As$_2$Se$_3$
    
    Fizika Tverdogo Tela, 53:3 (2011),  430–432
12. Investigation of the structure of an amorphous As–Se semiconductor system by relaxation methods
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1646–1651
13. Study of dielectric processes in (As$_2$Se$_3$)$_{1-x}$Bi$_x$ amorphous films
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  622–624
14. Broadband dielectric response of amorphous arsenic triselenide layers grown by different methods
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  1–6
15. Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1038–1041
16. Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  80–86
17. Dispersion of dielectric parameters in modified arsenic triselenide layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:17 (2010),  9–15