Novikov Aleksei Vital'evich

Publications in Math-Net.Ru

1. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
2. Approach for obtaining Ge/Si(001) self-assembled hut wires for hole spin qubits
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  17–20
3. High-Q states in the emission spectra of linear periodic chains of Si nanodisks with embedded GeSi quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 58:5 (2024),  238–241
4. Isotopically purified Si/SiGe epitaxial structures for quantum computing
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
5. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
6. Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1210–1215
7. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
8. Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  654–658
9. Formation and optical properties of locally strained Ge microstructures embedded into cavities
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  420–426
10. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
11. Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  822–829
12. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  708–715
13. Influence of the growth conditions and doping level on the luminescence kinetics of Ge:Sb layers grown on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  685–690
14. Emission properties of heavily doped epitaxial indium-nitride layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
15. Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1366–1371
16. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
17. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
18. Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  897–902
19. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
20. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
21. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
22. Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1028–1033
23. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
24. A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018),  11–19
25. Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1611–1615
26. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1599–1604
27. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
28. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
29. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
30. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
31. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
32. Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1657–1661
33. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1629–1633
34. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
35. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
36. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
37. Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016),  40–48
38. Hodographs in diode-structure diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1492–1496
39. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
40. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1458–1462
41. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1453–1457
42. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
43. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
44. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
45. Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time
    
    Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  94–98
46. Quantitative calibration and germanium SIMS depth profiling in Ge$_x$Si$_{1-x}$/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1138–1146
47. A new approach to the diagnostics of nanoislands in Ge$_x$Si$_{1-x}$/Si heterostructures by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:14 (2014),  36–46
48. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1509–1512
49. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1493–1496
50. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  404–409
51. Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1515–1520
52. Optical monitoring of technological parameters during molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1505–1509
53. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
54. Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1384–1387
55. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si$_{1-x}$Ge$_x$ buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  665–672
56. Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012),  7–15
57. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  230–234
58. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206
59. Method of selective doping of silicon by segregating impurities
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011),  75–81
60. Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  538–543
61. Secondary cluster ions Ge$_2^-$ and Ge$_3^-$ for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  418–421
62. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  346–351