Baidakova Nataliya Alekseevna

Publications in Math-Net.Ru

1. Optoelectronic properties of highly doped Ge:Sb layers prepared by ion-beam methods
   
   Optics and Spectroscopy, 132:11 (2024),  1189–1195
2. Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  954–960
3. Formation and optical properties of locally strained Ge microstructures embedded into cavities
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  420–426
4. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
5. Influence of the growth conditions and doping level on the luminescence kinetics of Ge:Sb layers grown on silicon
   
   Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  685–690
6. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
7. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
8. Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1293–1296
9. Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  897–902
10. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
11. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1599–1604
12. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
13. Strained multilayer structures with pseudomorphic GeSiSn layers
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1610–1614
14. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1458–1462
15. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
16. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1509–1512
17. Optical monitoring of technological parameters during molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1505–1509
18. Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012),  7–15
19. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206