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Yurasov Dmitrii Vladimirovich

Publications in Math-Net.Ru

  1. Fabrication of dielectric resonators on the light-emitting GeSi heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 95:1 (2025),  128–135
  2. Approach for obtaining Ge/Si(001) self-assembled hut wires for hole spin qubits

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  17–20
  3. Isotopically purified Si/SiGe epitaxial structures for quantum computing

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
  4. Effect of optical excitation conditions on the spectral and temporal characteristics of the radiation from two-dimensional photonic crystals with Ge(Si) nanoislands

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  251–258
  5. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
  6. Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  29–32
  7. Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  954–960
  8. Comparison of À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
  9. Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  654–658
  10. Formation and optical properties of locally strained Ge microstructures embedded into cavities

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  420–426
  11. Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  822–829
  12. Influence of the growth conditions and doping level on the luminescence kinetics of Ge:Sb layers grown on silicon

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  685–690
  13. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
  14. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
  15. Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  897–902
  16. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
  17. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
  18. Formation and properties of locally tensile strained Ge microstructures for silicon photonics

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
  19. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
  20. A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018),  11–19
  21. Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1611–1615
  22. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1599–1604
  23. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
  24. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
  25. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
  26. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
  27. Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1657–1661
  28. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1629–1633
  29. Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016),  40–48
  30. Hodographs in diode-structure diagnostics

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1492–1496
  31. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
  32. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1453–1457
  33. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
  34. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
  35. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
  36. Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time

    Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  94–98
  37. Quantitative calibration and germanium SIMS depth profiling in Ge$_x$Si$_{1-x}$/Si heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1138–1146
  38. A new approach to the diagnostics of nanoislands in Ge$_x$Si$_{1-x}$/Si heterostructures by secondary ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:14 (2014),  36–46
  39. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1493–1496
  40. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  404–409
  41. Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1515–1520
  42. Optical monitoring of technological parameters during molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1505–1509
  43. Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1384–1387
  44. Method of selective doping of silicon by segregating impurities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011),  75–81
  45. Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  538–543
  46. Secondary cluster ions Ge$_2^-$ and Ge$_3^-$ for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  418–421

© Steklov Math. Inst. of RAS, 2026