Pavluchenko Aleksei Sergeevich

Publications in Math-Net.Ru

1. Effect of intermediate layer on the formation and properties of nanostructured ITO films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025),  50–54
2. Characteristics of aluminum oxide deposition on an array of ITO nanowhiskers
   
   Fizika Tverdogo Tela, 66:12 (2024),  2099–2101
3. Modified structure of the nanocrystalline ito films
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  297–301
4. Formation of a light-scattering microrelief during atomic-layer deposition of a dielectric layer on a nanostructured film of indium-tin oxide
   
   Fizika Tverdogo Tela, 65:12 (2023),  2148–2150
5. Influence of oxygen on the process of formation of nanostructured films of indium-tin oxide
   
   Fizika Tverdogo Tela, 65:12 (2023),  2079–2082
6. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
7. Study of deposition of Al$_2$O$_3$ nanolayers by atomic layer deposition on the structured ito films
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  825–830
8. ZnO-based antireflection layers obtained by the electron beam evaporation
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1248–1254
9. Application of atomic layer deposition for obtaining nanostructured ITO/Al$_{2}$O$_{3}$ coatings
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  365–372
10. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
11. Combination of reactive-ion etching and chemical etching as a method for optimizing the surface relief on AlGaInN heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1106–1111
12. Modification of the $n$-surface profile of AlGaInN LEDs by changing the gas-mixture composition during reactive ion etching
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  564–569
13. High-voltage alingan LED chips
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1562–1567
14. Nanostructured ITO/SiO$_{2}$ coatings
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1052–1057
15. Technique for the formation of antireflection coatings based on ITO films
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  181–189
16. Study of the effective refractive index profile in self-assembling nanostructured ITO films
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1228–1236
17. Technique for forming ITO films with a controlled refractive index
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  1001–1006
18. Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  994–998
19. Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1713–1718
20. High-power AlGaInN LED chips with two-level metallization
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1287–1293
21. Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  61–66
22. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  386–391
23. AlGaInN-based light emitting diodes with a transparent $p$-contact based on thin ITO films
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  384–388
24. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431
25. Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  684–687