Baranov Artem Igorevich

Publications in Math-Net.Ru

1. Capacitance studies of solar cells based on nanostructured “black” silicon with a passivating $n$-GaP layer
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  223–226
2. Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  18–22
3. Surface-enhanced Raman spectroscopy on “black silicon” substrates
   
   Fizika Tverdogo Tela, 66:12 (2024),  2152–2154
4. Hybrid solar cells based on PEDOT:PSS/Si heterojunction obtained by spin coating on silicon fiber array
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  569–572
5. Temperature analysis of dark current in pin-photodiodes based on In$_{0.83}$Ga$_{0.17}$As/InP epitaxial heterostructures with metamorphic buffer layers
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  358–364
6. Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  3–6
7. Study of the influence of electron beam irradiation on the photoelectric and electrophysical properties of silicon HJT solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  23–27
8. Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures
   
   Fizika Tverdogo Tela, 65:12 (2023),  2198–2200
9. Plasma enhanced atomic layer deposition of InP layers and multilayer InP/GaP structures on Si substrate
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  406–413
10. Simulation of the PEDOT:PSS/Si heterostructure for flexible hybrid solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  52–55
11. Study of InP/GaP quantum wells grown by vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
12. Study of active regions based on multiperiod GaAsN/InAs superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
13. Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  360–364
14. Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  31–33
15. Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  47–50
16. Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  24–27
17. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
18. A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021),  49–51
19. Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  37–40
20. Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1668–1674
21. Admittance spectroscopy of solar cells based on GaPNAs layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  534–538
22. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  88–94