Uvarov Aleksandr Vyacheslavovich

Publications in Math-Net.Ru

1. Оптические и фотоэлектрические свойства многослойных структур GaN|InP, сформированных методом плазмохимического атомно-слоевого осаждения
   
   Fizika Tverdogo Tela, 67:12 (2025),  2390–2393
2. Study of the influence of spin-coating parameters and PEDOT:PSS suspension composition on the performance of $b$-Si/PEDOT:PSS solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  286–290
3. Capacitance studies of solar cells based on nanostructured “black” silicon with a passivating $n$-GaP layer
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  223–226
4. Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  18–22
5. Surface-enhanced Raman spectroscopy on “black silicon” substrates
   
   Fizika Tverdogo Tela, 66:12 (2024),  2152–2154
6. Hybrid solar cells based on PEDOT:PSS/Si heterojunction obtained by spin coating on silicon fiber array
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  569–572
7. Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  3–6
8. Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures
   
   Fizika Tverdogo Tela, 65:12 (2023),  2198–2200
9. Plasma enhanced atomic layer deposition of InP layers and multilayer InP/GaP structures on Si substrate
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  406–413
10. The influence of chemical pretreatment on the passivation efficiency of textured silicon wafers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  62–64
11. Simulation of the PEDOT:PSS/Si heterostructure for flexible hybrid solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  52–55
12. Study of InP/GaP quantum wells grown by vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
13. Impact of silicon wafer surface treatment on the morphology of GaP layers produced by plasma enhanced atomic layer deposition
    
    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  213–220
14. Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements
    
    Optics and Spectroscopy, 129:2 (2021),  218–222
15. Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  360–364
16. Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  31–33
17. Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  47–50
18. Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  24–27
19. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
20. A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021),  49–51
21. Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  37–40
22. Effect of thermal annealing on the photovoltaic properties of GaP/Si heterostructures fabricated by plasma-enhanced atomic layer deposition
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1095–1102