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Maksimova Alina Andreevna

Publications in Math-Net.Ru

  1. Оптические и фотоэлектрические свойства многослойных структур GaN|InP, сформированных методом плазмохимического атомно-слоевого осаждения

    Fizika Tverdogo Tela, 67:12 (2025),  2390–2393
  2. Study of the influence of spin-coating parameters and PEDOT:PSS suspension composition on the performance of $b$-Si/PEDOT:PSS solar cells

    Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  286–290
  3. Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  18–22
  4. Surface-enhanced Raman spectroscopy on “black silicon” substrates

    Fizika Tverdogo Tela, 66:12 (2024),  2152–2154
  5. Hybrid solar cells based on PEDOT:PSS/Si heterojunction obtained by spin coating on silicon fiber array

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  569–572
  6. Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  3–6
  7. Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures

    Fizika Tverdogo Tela, 65:12 (2023),  2198–2200
  8. Plasma enhanced atomic layer deposition of InP layers and multilayer InP/GaP structures on Si substrate

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  406–413
  9. Simulation of the PEDOT:PSS/Si heterostructure for flexible hybrid solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  52–55
  10. Study of InP/GaP quantum wells grown by vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
  11. Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  360–364
  12. Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  31–33
  13. Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  47–50
  14. Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  24–27
  15. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
  16. Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  37–40


© Steklov Math. Inst. of RAS, 2026