Konenkova Elena Valer'evna

Publications in Math-Net.Ru

1. Полуполярный нитрид алюминия: эпитаксия объемного материала на наноструктурированной кремниевой подложке
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026),  25–28
2. The investigation of the impact of nano-structured AlN/Si(100) templates for the growth of semipolar AlN$(10\bar11)$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  3–7
3. The epitaxy of AlN$(11\bar{2}2)$ layers on GaN$(11\bar{2}2)$/$m$-Al$_2$О$_3$ template by hydride vapour-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  42–44
4. Metalorganic vapor phase epitaxy of AlN layers on a nanostructured AlN/Si(100) template synthesized by reactive magnetron sputtering
   
   Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  944–947
5. HVPE epitaxy of semipolar AlN(10$\bar{1}$1) layers on the AlN/Si(100) template
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  474–477
6. Surface morphology of AlN layers grown on a nano-structured SiN$_x$/Si(100) template
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  3–6
7. Semipolar wide-band III–N-layers on a silicon substrate: orientation controlling epitaxy and the properties of structures (review)
   
   Zhurnal Tekhnicheskoi Fiziki, 93:9 (2023),  1235–1262
8. Initial stages of growth of the $\mathrm{GaN}(11\bar22)$
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  3–6
9. Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  720–723
10. Anisotropic stresses in $\mathrm{GaN}(11\bar20)$ layers on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate during hydride vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  266–270
11. Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  908–911
12. Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  356–359
13. Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2123–2126
14. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
15. Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  12–14
16. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
17. Properties of semipolar GaN grown on a Si(100) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
18. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
19. Semipolar gan layers grown on nanostructured Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
20. Hexagonal AlN layers grown on sulfided Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
21. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates
    
    Fizika Tverdogo Tela, 59:4 (2017),  660–667
22. Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN
    
    Fizika Tverdogo Tela, 57:10 (2015),  1916–1921
23. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
24. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  1–8
25. Epitaxy of gallium nitride in semi-polar direction on silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  21–26
26. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23