Sidorov Georgii Yur'evich

Publications in Math-Net.Ru

1. Low-temperature surface treatments of CdHgTe using the PE-ALD method before HfO$_2$ deposition
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  120–125
2. Passivation of CdHgTe surface using low-temperature plasma-enhanced atomic layer deposition of HfO$_2$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  7–10
3. Water – a source electrically active centres in CdHgTe
   
   Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  114–119
4. Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  22–25
5. Studying C–V characteristics of MIS structures with ALD Al$_2$O$_3$ on $n$- and $p$-CdHgTe stabilized with ultra-thin native oxide
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  915–921
6. MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  243–249
7. Investigation of metal–insulator–semiconductor structure based on CdHgTe and HfO$_2$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  16–19
8. Formation of acceptor centers in CdHgTe as a result of water and heat treatments
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  331–335
9. Admittance of MIS structures based on $nBn$ systems of epitaxial HgCdTe for detection in the 3–5 $\mu$m spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  34–37
10. The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  33–35
11. Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1122–1128
12. The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  14–17
13. Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  10–13
14. Surface сonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1207–1211
15. CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1652–1656
16. The influence of hydrogenation on the electrical properties of the Cd$_x$Hg$_{1-x}$Te epitaxial structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  408–413
17. Stimulated radiation at a wavelength of 2.5 $\mu$m at room temperature from optically excited Cd$_x$ Hg$_{1-x}$Te-based structures
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  476–481
18. Photoluminescence of CdHgTe epilayers grown on silicon substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  39–46