Mikhailova Maiya Pavlovna

Publications in Math-Net.Ru

1. Absorption of microwave radiation and magnetoresistance oscillations in InAs/GaSb composite quantum wells with inverted band spectrum in a quantizing magnetic field (Review)
   
   Fizika Tverdogo Tela, 66:3 (2024),  323–333
2. Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  995–1010
3. Magnetophonon oscillations of magnetoresistance in broken-gap InAs/GaS quantum well
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  313–318
4. Radiative recombination and impact ionization in semiconductor nanostructures (review)
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1267–1288
5. Discovery of III–V semiconductors: physical properties and application
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  291–308
6. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
7. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
8. Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1393–1399
9. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201
10. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  247–252
11. Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800
12. High-temperature luminescence in an $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb light-emitting heterostructure with a high potential barrier
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1270–1275
13. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1037–1042
14. Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  75–82
15. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  251–255
16. Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  69–74
17. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49


18. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476