Hübers Heinz-Wilhelm

Publications in Math-Net.Ru

1. Recombination in gapless HgTe/CdHgTe quantum well heterostructure
   
   Fizika Tverdogo Tela, 64:2 (2022),  173–178
2. Temperature dependence of the Fermi level in HgCdTe narrow-gap bulk films at different mercury vacancy concentrations
   
   Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  465–471
3. Thermal activation of valley-orbit states of neutral magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  500
4. Optical cross sections and oscillation strengths of magnesium double donor in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  299–303
5. Relaxation of the excited states of arsenic in strained germanium
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1145–1149
6. Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  816–821
7. Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1285–1288
8. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
9. Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1257–1262
10. Polarization of the induced THz emission of donors in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1701–1705
11. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1479–1483
12. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  15–20
13. Shallow-donor lasers in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  199–205