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Mynbaev Karim Jafarovich

Publications in Math-Net.Ru

  1. Optical properties of indium-doped Hg$_{0.3}$Cd$_{0.7}$Te epitaxial films

    Fizika Tverdogo Tela, 67:5 (2025),  805–809
  2. Thermal annealing of CdTe-rich HgCdTe: structural and optical studies

    Fizika Tverdogo Tela, 67:1 (2025),  22–27
  3. Infrared photoreflectance of Cd$_{0.3}$Hg$_{0.7}$Te epitaxial films

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  544–547
  4. Characterization of wide-bandgap layers in laser structures based on CdHgTe

    Fizika Tverdogo Tela, 65:3 (2023),  411–414
  5. Photoluminescence of Hg$_{0.3}$Cd$_{0.7}$Te and Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  640–643
  6. Photoluminescence of arsenic doped epitaxial films of Cd$_{0.3}$Hg$_{0.7}$Te

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  491–494
  7. Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  876–881
  8. Comparative analysis of the efficiency of electroluminescence in type I and II heterostructures based on narrow-gap À$^{\mathrm{III}}$B$^{\mathrm{V}}$ compounds

    Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  479–485
  9. Optical and structural properties of Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1040–1044
  10. Spectral and electrical properties of led heterostructures with InAs-based active layer

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  682–687
  11. Optical properties of quasi-bulk gallium-nitride crystals with highly oriented texture structure

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  554–558
  12. Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range

    Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  502–506
  13. Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP

    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  277–281
  14. Optical and structural properties of HgCdTe solid solutions with a high CdTe content

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1302–1308
  15. Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  51–54
  16. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers

    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
  17. Parameters of lateral and unsteady cord currents in a cylindrical chalcogenide glassy semiconductor

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1669–1673
  18. Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  450–455
  19. An optical study of disordering in cadmium mercury telluride solid solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  24–27
  20. Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions

    Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017),  419–426
  21. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  247–252
  22. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  208–211
  23. Formation of graphite/SiC structures by the thermal decomposition of silicon carbide

    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  138–142
  24. Temperature dependence of the carrier lifetime in narrow-gap Cd$_x$Hg$_{1-x}$Te solid solutions: Radiative recombination

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1206–1211
  25. Temperature dependence of the carrier lifetime in Cd$_x$Hg$_{1-x}$Te narrow-gap solid solutions with consideration for Auger processes

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  444–448
  26. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  379–384
  27. Optical and thermal properties of phosphors based on lead-silicate glass for high-power white LEDs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:21 (2015),  38–44
  28. Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1573–1577
  29. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  364–368
  30. Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  207–211
  31. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:16 (2014),  65–72
  32. High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy

    Zhurnal Tekhnicheskoi Fiziki, 83:10 (2013),  147–150
  33. Effects of light scattering in optical coatings on energy losses in LED devices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  1–8
  34. Analysis of photoconductivity spectra with a strongly delayed photoresponse

    Zhurnal Tekhnicheskoi Fiziki, 82:9 (2012),  119–122
  35. Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1363–1367
  36. Optical transitions in Cd$_x$Hg$_{1-x}$Te-based quantum wells and their analysis with account for the actual band structure of the material

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  792–797
  37. Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  10–17
  38. Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  31–36
  39. Diffusion in porous silicon carbide

    Fizika Tverdogo Tela, 53:5 (2011),  885–891
  40. Photoelectric properties of porous GaN/SiC heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1369–1372
  41. Defect structure of Cd$_x$Hg$_{1-x}$Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1166–1170
  42. Photoluminescence of Hg$_{1-x}$Cd$_x$Te based heterostructures grown by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  900–907
  43. Photoluminescence of CdHgTe based nanoheterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  70–77
  44. Photoluminescence of CdHgTe epilayers grown on silicon substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  39–46

© Steklov Math. Inst. of RAS, 2026