Semakova Antonina Aleksandrovna

Publications in Math-Net.Ru

1. Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  876–881
2. Comparative analysis of the efficiency of electroluminescence in type I and II heterostructures based on narrow-gap А$^{\mathrm{III}}$B$^{\mathrm{V}}$ compounds
   
   Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  479–485
3. Spectral and electrical properties of led heterostructures with InAs-based active layer
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  682–687
4. Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  502–506
5. Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  277–281
6. Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  51–54
7. Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  450–455
8. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  247–252