Kalygina Vera Mikailovna

Publications in Math-Net.Ru

1. Фотоэлектрические свойства аморфных пленок Ga$_2$O$_3$, легированных фосфором и селеном
   
   Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  161–166
2. Effect of thermal annealing on properties Ga$_2$O$_3$/GaAs:Cr heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 93:11 (2023),  1631–1636
3. Self-powered photo diodes based on Ga$_2$O$_3$/$n$-GaAs structures
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  928–932
4. Influence of electrode topology on the parameters of solar-blind UV detectors
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  264–268
5. Effect of ultraviolet radiation and electric field on the conductivity of structures based on $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1035–1040
6. Solar-blind UV detectors based on $\beta$-Ga$_{2}$O$_{3}$ films
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  575–579
7. Properties of resistive structures based on gallium oxide polymorphic phases
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  33–36
8. The effect of operating modes on the response of ammonia sensors based on tin dioxide films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  21–24
9. Influence of the substrate material on the properties of gallium-oxide films and gallium-oxide-based structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  468–473
10. Structure and properties of gallium-oxide films produced by high-frequency magnetron-assisted deposition
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  411–417
11. Conductivity of Ga$_{2}$O$_{3}$–GaAs heterojunctions
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  154–160
12. Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1178–1184
13. Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1036–1040
14. Deep centers in TiO$_2$-Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1036–1042
15. Photoelectric characteristics of metal – Ga$_2$O$_3$–GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  357–363
16. Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO$_2$–Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  989–994
17. Properties of TiO$_2$ films on silicon substrate
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  759–762
18. Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1137–1143
19. Gallium-oxide films obtained by thermal evaporation
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  598–603
20. Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1027–1031
21. The effect of annealing on the properties of Ga$_2$O$_3$ anodic films
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  278–284
22. Ga$_2$O$_3$ films formed by electrochemical oxidation
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1130–1135
23. Effect of oxygen plasma on the properties of tantalum oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1266–1273
24. Effect of laser annealing on electric characteristics of GaAs-base MDS structures
    
    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1120–1123