Kalyuzhnyy Nikolai Aleksandrovich

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Влияние типа подложки-носителя на резистивные и оптические свойства AlGaAs/GaInAs светоизлучающих инфракрасных диодов
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  330–335
3. Направленность вывода излучения из кольцевых микролазеров с нарушенной вращательной симметрией
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  27–30
4. Влияние параметров $p$–$n$-переходов на оптимизацию конструкции контактов в фотоэлектрических преобразователях лазерного излучения
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026),  8–11
5. AlGaAs subcells for hybrid А$^3$В$^5$//Si solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:3 (2026),  49–52
6. Photoelectric laser radiation converter $\lambda$ = 1064 nm based on GaInAsP/InP
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  447–451
7. Study of the emission from a microdisk laser monolithically integrated with an optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  388–391
8. Hybrid multijunction solar cells based on bonding of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ and silicon materials
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  328–331
9. Metamorphic InGaAs/GaAs heterostructures for radiation-resistant laser power converters
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  291–293
10. Photovoltaic converters resistive parameters effect on its IV-curves and electroluminescence maps
    
    Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  281–285
11. Determination of imbalance of photogenerated currents in multijunction photoconverters of laser radiation
    
    Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  219–222
12. Increasing the efficiency of optical power input in AlGaAs/GaAs photovoltaic laser converters
    
    Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  209–213
13. Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  190–194
14. Ferroelectric properties of (Al,Ga)InP$_2$ alloys
    
    Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  130–135
15. Bridge-contact microdisk lasers formed by wet chemical etching
    
    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  37–42
16. Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  45–49
17. Tandem GaInP/Ga(In)As structures for triple-junction hybrid GaInP/Ga(In)As//Si solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:13 (2025),  40–43
18. Formation of the light extracting surface of IR (850 nm) light-emitting diodes
    
    Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  888–893
19. Design and efficiency correlation of IR light-emitting diodes based on quantum dimensional heterostructures AlGaAs
    
    Zhurnal Tekhnicheskoi Fiziki, 94:4 (2024),  632–637
20. Electroluminescence of leds with quantum wells at high and low-level injection
    
    Optics and Spectroscopy, 132:12 (2024),  1214–1218
21. Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850–960 nm)
    
    Optics and Spectroscopy, 132:11 (2024),  1146–1149
22. Impact of the atomic ordering degree on the ferroelectric properties of GaInP$_2$ alloys
    
    Optics and Spectroscopy, 132:11 (2024),  1127–1130
23. Three-parameter tube model of current spreading in solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  573–576
24. Study of the incorporation of group V atoms into arsenide-phosphide solid solutions grown by vapor-phase epitaxy using (CH$_3$)$_3$As an arsenic source
    
    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  541–543
25. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
    
    Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
26. Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  107–113
27. Dependence of lasing wavelength on optical loss in quantum dot laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
28. High-power subnanosecond module based on $p$–$i$–$n$ AlGaAs/GaAs photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  5–8
29. Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:18 (2024),  22–26
30. Photodetectors with the long-wavelength cutoff of 2.4 $\mu$m based on metamorphic InGaAs/InP heterostructures grown by metal-organic vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  15–18
31. Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  23–27
32. Current invariant as a method of searching for the optimum band gap of subcells of multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  32–34
33. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
34. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
    
    Optics and Spectroscopy, 131:11 (2023),  1483–1485
35. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
36. Effect of temperature on current through various recombination channels in GaAs solar cells with GaInAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  700–705
37. Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  620–623
38. Epitaxial heterostructures of the active region for near-infrared LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  538–541
39. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
40. Model for speed performance of quantum-dot waveguide photodiode
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
41. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
42. Influence of photogenerated currents imbalance on current-voltage characteristics of multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  38–41
43. High-efficiency GaInP/GaAs photoconverters of the 600 nm laser line
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  32–34
44. Study of InP/GaP quantum wells grown by vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
45. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
46. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  993–996
47. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
48. Bimodality in the electroluminescence spectra of quantum well-dots InGaAs nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  97–100
49. A GaInP-based photo-converter of laser radiation with an efficiency of 46.7% at a wavelength of 600 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  24–26
50. High-speed photodetectors based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
51. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
52. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
53. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
54. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
55. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  614–617
56. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
57. Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  28–31
58. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
59. Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  51–54
60. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
61. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
62. Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  29–31
63. Laser power converter modules with a wavelength of 809–850 nm
    
    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1764–1768
64. Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1079–1087
65. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
66. Effects of doping of bragg reflector layers on the electrical characteristics of InGaAs/GaAs metamorphic photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  400–407
67. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
68. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
69. The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  30–33
70. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
71. Finding the energy gap of Ga$_{1-x}$In$_{x}$As $p$–$n$ junctions on a metamorphic buffer from the photocurrent spectrum
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  29–31
72. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
73. Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1568–1572
74. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
75. Module of laser-radiation ($\lambda$ = 1064 nm) photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1135–1139
76. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
77. Increasing the photocurrent of a Ga(In)As subcell in multijunction solar cells based on GaInP/Ga(In)As/Ge heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  41–43
78. Anomalies in photovoltaic characteristics of multijunction solar cells at ultrahigh solar light concentrations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  37–39
79. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
80. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
81. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
82. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
83. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
84. Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1126–1130
85. In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  729–735
86. Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  477
87. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
88. An antireflection coating of a germanium subcell in GaInP/GaAs/Ge solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  95–101
89. Optical properties of InGaAs/InAlAs metamorphic nanoheterostructures for photovoltaic converters of laser and solar radiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  50–58
90. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
91. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1131–1137
92. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
93. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
94. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  94–100
95. Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1242–1246
96. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
97. On current spreading in solar cells: a two-parameter tube model
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  987–992
98. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  525–530
99. Determination of the technological growth parameters in the InAs–GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1136–1143
100. Site-Controlled Growth of Single InP QDs
     
     Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1120–1123
101. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
     
     Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1115–1119
102. Effect of the interaction conditions of the probe of an atomic-force microscope with the $n$-GaAs surface on the triboelectrization phenomenon
     
     Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1083–1087
103. Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents
     
     Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  682–687
104. Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell
     
     Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  671–676
105. Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells
     
     Zhurnal Tekhnicheskoi Fiziki, 83:7 (2013),  106–110
106. Local triboelectrification of an $n$-GaAs surface using the tip of an atomic-force microscope
     
     Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1181–1184
107. Picosecond internal $Q$-switching mode correlates with laser diode breakdown voltage
     
     Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  383–385
108. Photoelectric determination of the series resistance of multijunction solar cells
     
     Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1074–1081
109. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters
     
     Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
110. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors
     
     Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1649–1654
111. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
     
     Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1568–1576
112. Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells
     
     Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1118–1123