Kornyshov Grigorii Olegovich

Publications in Math-Net.Ru

1. Spatial current distribution in semiconductor optical amplifiers with ridge waveguides and quantum well-dot active region
   
   Optics and Spectroscopy, 133:10 (2025),  1063–1067
2. Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  310–313
3. Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  45–49
4. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
5. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
6. Spectral characteristics of an optically coupled pair of stripe lasers based on InAs/InGaAs/GaAs quantum dots
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  57–60
7. Contribution of additional waveguides to heterostructure resistance of high-power coupled-waveguide-based InGaAs/GaAs/AlGaAs edge-emitting lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  18–22
8. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
9. Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1148–1153
10. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
11. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
12. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
13. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
14. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
15. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
16. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45