Payusov Aleksei Sergeevich

Publications in Math-Net.Ru

1. Spatial current distribution in semiconductor optical amplifiers with ridge waveguides and quantum well-dot active region
   
   Optics and Spectroscopy, 133:10 (2025),  1063–1067
2. Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  310–313
3. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
4. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
5. Contribution of additional waveguides to heterostructure resistance of high-power coupled-waveguide-based InGaAs/GaAs/AlGaAs edge-emitting lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  18–22
6. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
7. Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1148–1153
8. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
9. Internal loss in diode lasers with quantum well-dots
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
10. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
11. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
12. Parasitic recombination in a laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
13. Generation of picosecond pulses by lasers with distributed feedback at a wavelength of 1064 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  12–15
14. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
15. Semiconductor laser quasi-array with phase-locked single-mode emitting channels
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1444–1447
16. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
17. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
18. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
19. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
20. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
21. Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  30–39
22. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
23. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
24. Determination of the technological growth parameters in the InAs–GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1136–1143
25. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1115–1119
26. Multilayer quantum-dot arrays of high bulk density
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1487–1491
27. Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  81–87
28. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
29. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
30. A temperature-stable semiconductor laser based on coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  560–565
31. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1401–1406
32. Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1352–1356