Gordeev Nikita Yur'evich

Publications in Math-Net.Ru

1. Spatial current distribution in semiconductor optical amplifiers with ridge waveguides and quantum well-dot active region
   
   Optics and Spectroscopy, 133:10 (2025),  1063–1067
2. Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  310–313
3. Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  45–49
4. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
5. Dependence of beam propagation ratio on waveguide design in edge-emitting diode lasers
   
   Optics and Spectroscopy, 132:5 (2024),  520–523
6. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
7. Contribution of additional waveguides to heterostructure resistance of high-power coupled-waveguide-based InGaAs/GaAs/AlGaAs edge-emitting lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  18–22
8. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
9. Information encoding using two-level generation in a quantum dot laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  18–21
10. Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1148–1153
11. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
12. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
13. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
14. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
15. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
16. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
17. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
18. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
19. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
20. Semiconductor laser quasi-array with phase-locked single-mode emitting channels
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1444–1447
21. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
22. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
23. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
24. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
25. Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  260–265
26. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
27. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
28. Local triboelectrification of an $n$-GaAs surface using the tip of an atomic-force microscope
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1181–1184
29. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
30. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1353–1356
31. Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:2 (2012),  25–31
32. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  996–1000
33. A temperature-stable semiconductor laser based on coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  560–565
34. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1401–1406