Nadtochiy Aleksei Mikailovich

Publications in Math-Net.Ru

1. Spatial current distribution in semiconductor optical amplifiers with ridge waveguides and quantum well-dot active region
   
   Optics and Spectroscopy, 133:10 (2025),  1063–1067
2. Photoelectric laser radiation converter $\lambda$ = 1064 nm based on GaInAsP/InP
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  447–451
3. Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  190–194
4. High-frequency modulation of a quantum dot microring laser at elevated temperature
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025),  32–35
5. Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850–960 nm)
   
   Optics and Spectroscopy, 132:11 (2024),  1146–1149
6. Study of the incorporation of group V atoms into arsenide-phosphide solid solutions grown by vapor-phase epitaxy using (CH$_3$)$_3$As an arsenic source
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  541–543
7. Study of the structural and optical properties of InGaAs quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  318–325
8. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
9. Dependence of lasing wavelength on optical loss in quantum dot laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
10. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
    
    Optics and Spectroscopy, 131:11 (2023),  1483–1485
11. The effect of surface passivation of GaAs-based cylindrical mesa structures on their optical properties
    
    Optics and Spectroscopy, 131:8 (2023),  1112–1117
12. Effect of temperature on current through various recombination channels in GaAs solar cells with GaInAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  700–705
13. Epitaxial heterostructures of the active region for near-infrared LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  538–541
14. Model for speed performance of quantum-dot waveguide photodiode
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
15. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
16. Information encoding using two-level generation in a quantum dot laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  18–21
17. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  993–996
18. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
19. Bimodality in the electroluminescence spectra of quantum well-dots InGaAs nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  97–100
20. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  42–46
21. Two-state lasing in injection microdisks with InAs/InGaAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  40–43
22. High-speed photodetectors based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
23. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
24. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
    
    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
25. Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements
    
    Optics and Spectroscopy, 129:2 (2021),  218–222
26. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
27. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
28. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
29. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
30. Impact of substrate in calculating the electrical resistance of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
31. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
32. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
33. Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range
    
    Optics and Spectroscopy, 128:1 (2020),  110–117
34. Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1079–1087
35. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
36. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
37. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
38. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
39. The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  30–33
40. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
41. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
42. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
43. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
44. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
45. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
46. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
47. In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  729–735
48. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
49. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
50. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
51. Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1208–1212
52. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
53. Determination of the technological growth parameters in the InAs–GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1136–1143
54. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1115–1119
55. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
56. Multilayer quantum-dot arrays of high bulk density
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1487–1491
57. Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  81–87
58. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
59. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
60. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
61. Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  985–989
62. High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  684–689
63. Optical anisotropy of InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
64. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  70–77
65. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
66. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
67. Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  10–16
68. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1379–1385
69. Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  992–995
70. Matrices of 960-nm vertical-cavity surface-emitting lasers
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  836–839
71. Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  688–693
72. Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1352–1356
73. Optical anisotropy of InAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  24–30